A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1