发明申请
- 专利标题： MEMORY STRUCTURE AND METHOD OF MAKING THE SAME
- 专利标题（中）： 记忆结构及其制作方法
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申请号： US11949786申请日： 2007-12-04
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公开(公告)号： US20080305593A1公开(公告)日： 2008-12-11
- 发明人: Ching-Nan Hsiao , Pei-Ing Lee , Ming-Cheng Chang , Chung-Lin Huang , Hsi-Hua Chang , Chih-Hsiang Wu
- 申请人： Ching-Nan Hsiao , Pei-Ing Lee , Ming-Cheng Chang , Chung-Lin Huang , Hsi-Hua Chang , Chih-Hsiang Wu
- 优先权： TW096121018 20070611
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A memory structure disclosed in the present invention features a control gate and floating gates being positioned in recessed trenches. A method of fabricating the memory structure includes the steps of first providing a substrate having a first recessed trench. Then, a first gate dielectric layer is formed on the first recessed trench. A first conductive layer is formed on the first gate dielectric layer. After that, the first conductive layer is etched to form a spacer which functions as a floating gate on a sidewall of the first recessed trench. A second recessed trench is formed in a bottom of the first recessed trench. An inter-gate dielectric layer is formed on a surface of the spacer, a sidewall and a bottom of the second recessed trench. A second conductive layer formed to fill up the first and the second recessed trench.
公开/授权文献
- US07682902B2 Memory structure and method of making the same 公开/授权日：2010-03-23
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