发明申请
US20080307152A1 Memory Module, Memory Controller, Nonvolatile Storage, Nonvolatile Storage System, and Memory Read/Write Method
失效
内存模块，内存控制器，非易失性存储，非易失存储系统和内存读写方式
- 专利标题： Memory Module, Memory Controller, Nonvolatile Storage, Nonvolatile Storage System, and Memory Read/Write Method
- 专利标题（中）： 内存模块，内存控制器，非易失性存储，非易失存储系统和内存读写方式
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申请号： US11817532申请日： 2006-03-01
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公开(公告)号： US20080307152A1公开(公告)日： 2008-12-11
- 发明人: Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
- 申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2005-058462 20050303
- 国际申请： PCT/JP2006/303899 WO 20060301
- 主分类号： G06F12/00
- IPC分类号： G06F12/00
摘要：
In a storage having a nonvolatile RAM of destructive read type, the number of restorations attributed to data read from the nonvolatile RAM is decreased, and the overall life of the storage is prolonged. In a storage having a nonvolatile RAM of destructive read type and a volatile RAM and holding the same data in the nonvolatile and volatile RAMs, data is read out of the volatile RAM in reading and data is written in both volatile and nonvolatile RAMs in writing.
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