发明申请
- 专利标题: Thin-film capacitor, laminated structure and methods of manufacturing the same
- 专利标题(中): 薄膜电容器,层压结构及其制造方法
-
申请号: US12213366申请日: 2008-06-18
-
公开(公告)号: US20080307620A1公开(公告)日: 2008-12-18
- 发明人: Jung-Won Lee , Yul-Kyo Chung , In-Hyung Lee , Byung-lk Song , Seung-Eun Lee
- 申请人: Jung-Won Lee , Yul-Kyo Chung , In-Hyung Lee , Byung-lk Song , Seung-Eun Lee
- 申请人地址: KR Suwon
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon
- 优先权: KR10-2007-0059482 20070618
- 主分类号: H01G4/008
- IPC分类号: H01G4/008 ; H01G9/04
摘要:
Disclosed are an embedded capacitor and a printed circuit board including the same that can minimize the oxidization of a metal layer. A thin-film capacitor can include a first metal electrode film; a barrier layer, formed on the first metal electrode film to include a conductive oxide; a dielectric film, formed on the barrier layer; and a second metal electrode film, formed on the dielectric film. With the present invention, the outstanding characteristic of a ferroelectric thin film can be provided by minimizing the oxidization of a copper film in the heat treatment after forming the ferroelectric thin film on the copper film.