发明申请
US20080308817A1 Galvanic Isolator Having Improved High Voltage Common Mode Transient Immunity 有权
具有改进的高电压共模瞬态抗扰度的电隔离器

Galvanic Isolator Having Improved High Voltage Common Mode Transient Immunity
摘要:
A galvanic isolator having a transmitter die, a receiver die, and a lead frame is disclosed. The transmitter die includes an LED having first and second contacts for powering the LED, and the receiver die includes a photodetector. The lead frame includes first and second transmitter leads, and first and second receiver leads. The transmitter die is bonded to the first lead, the first contact being connected electrically to the first transmitter lead and the second contact being connected to the second transmitter lead. The receiver die is connected to the first and second receiver leads. The LED and the photodetector are positioned such that light generated by the LED is received by the photodetector. The first and second transmitter leads are capacitively coupled to the first receiver lead. The capacitive couplings are characterized by first and second capacitance values that are substantially the same.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/12 .与如在一个共用衬底内或其上形成的,一个或多个电光源,如场致发光光源在结构上相连的,并与其电光源在电气上或光学上相耦合的(场致发光光源本身入H05B33/00)
H01L31/16 ..由单光源或多光源控制的对辐射敏感的半导体器件
H01L31/167 ...对辐射敏感的光源或器件,均为以至少一个势垒或面垒为特征的半导体器件
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