发明申请
- 专利标题： Film formation method and apparatus for semiconductor process
- 专利标题（中）： 用于半导体工艺的成膜方法和装置
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申请号： US12155678申请日： 2008-06-06
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公开(公告)号： US20080311760A1公开(公告)日： 2008-12-18
- 发明人: Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
- 申请人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
- 优先权： JP2007-153735 20070611
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; B05C11/10
摘要：
A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.
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