发明申请
- 专利标题： Thermal Expansion Transition Buffer Layer for Gallium Nitride on Silicon
- 专利标题（中）： 硅上氮化镓的热膨胀转变缓冲层
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申请号： US12199144申请日： 2008-08-27
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公开(公告)号： US20080315255A1公开(公告)日： 2008-12-25
- 发明人: Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
- 申请人： Jer-Shen Maa , Tingkai Li , Douglas J. Tweet , Gregory M. Stecker , Sheng Teng Hsu
- 主分类号： H01L29/267
- IPC分类号： H01L29/267
摘要：
A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content increases with the graded SiGe film thickness.
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