There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes: an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15, and a translucent film layer 16 laminated in this order, and a concavo-convex surface is formed on at least a part of the surface of the titanium oxide-based conductive film layer 15.