发明申请
US20090001448A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
半导体存储器件及其制造方法
- 专利标题： SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US12118328申请日： 2008-05-09
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公开(公告)号： US20090001448A1公开(公告)日： 2009-01-01
- 发明人: Katsuyuki Sekine , Masayuki Tanaka , Katsuaki Natori , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Akihito Yamamoto
- 申请人： Katsuyuki Sekine , Masayuki Tanaka , Katsuaki Natori , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Akihito Yamamoto
- 优先权： JP2007-126916 20070511
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/3205
摘要：
A semiconductor memory device having a cell size of 60 nm or less includes a tunnel insulation film formed in a channel region of a silicon substrate containing a burying insulation film, a first conductive layer formed on the tunnel insulation film, an inter-electrode insulation film formed on the burying insulation film and the first conductive layer, a second conductive layer formed on the inter-electrode insulation film, a side wall insulation film formed on the side walls of the first conductive layer, the second conductive layer, and the inter-electrode insulation film, and an inter-layer insulation film formed on the side wall insulation film. The tunnel insulation film or the inter-electrode insulation film contains a high-dielectric insulation film. The side wall insulation film contains a predetermined concentration of carbon and nitrogen as well as chlorine having a concentration of 1×1019 atoms/cm3 or less.
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