发明申请
US20090001498A1 Nanowire photodiodes and methods of making nanowire photodiodes
失效
纳米线光电二极管及制造纳米线光电二极管的方法
- 专利标题： Nanowire photodiodes and methods of making nanowire photodiodes
- 专利标题（中）： 纳米线光电二极管及制造纳米线光电二极管的方法
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申请号： US11819226申请日： 2007-06-26
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公开(公告)号： US20090001498A1公开(公告)日： 2009-01-01
- 发明人: Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
- 申请人： Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
- 主分类号： G02B6/26
- IPC分类号： G02B6/26
摘要：
Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.
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