发明申请
- 专利标题： MULTIPLE WRITE CONFIGURATIONS FOR A MEMORY CELL
- 专利标题（中）： 用于存储单元的多个写入配置
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申请号： US11771747申请日： 2007-06-29
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公开(公告)号： US20090003034A1公开(公告)日： 2009-01-01
- 发明人: Thomas Happ , Jan Boris Philipp
- 申请人： Thomas Happ , Jan Boris Philipp
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C11/00
摘要：
One embodiment of the present invention relates to a method of programming an array of memory cells. In this method, a selection is made between a first pulse configuration and a second pulse configuration, each of which can write at least two data states to the memory cells of the array. Other embodiments are also disclosed.
公开/授权文献
- US07852657B2 Multiple write configurations for a memory cell 公开/授权日：2010-12-14
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