发明申请
- 专利标题： Memory cell with voltage modulated sidewall poly resistor
- 专利标题（中）： 具有电压调制侧壁聚电阻的存储单元
-
申请号： US11819562申请日： 2007-06-28
-
公开(公告)号： US20090003083A1公开(公告)日： 2009-01-01
- 发明人: Albert Meeks , Xiaoyu Yang , Kim Le
- 申请人： Albert Meeks , Xiaoyu Yang , Kim Le
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A two terminal nonvolatile memory cell includes a first electrode, a second electrode, a charge storage medium, and a resistive element. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes. A presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.
信息查询
