发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US12201024申请日: 2008-08-29
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公开(公告)号: US20090003091A1公开(公告)日: 2009-01-01
- 发明人: Kenji Yoshinaga , Fukashi Morishita
- 申请人: Kenji Yoshinaga , Fukashi Morishita
- 申请人地址: JP Tokyo
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-253508 20050901
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C7/10
摘要:
There is provided a semiconductor device supplied with internal power generated by an internal power generation circuit to perform a stable operation and, also, suppress power consumption. A control circuit, a row/column decoder and a sense amplifier are driven by an internal buck voltage. On the other hand, a data path with high power consumption is driven by an external power supply voltage. A level conversion circuit receives an address signal or a command signal having a voltage level of the external power supply voltage, converts the voltage level to the internal buck voltage, and outputs a resultant signal to the control circuit. A level conversion circuit receives a control signal having a voltage level of the internal buck voltage from the control circuit, converts the voltage level to the external power supply voltage, and outputs a resultant signal to the data path.
公开/授权文献
- US08014224B2 Semiconductor device 公开/授权日:2011-09-06
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