Forming vias using sacrificial material

Invention Application

US20090004841A1 Forming vias using sacrificial material 失效

Title translation: 使用牺牲材料形成通孔

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Patent Title: Forming vias using sacrificial material
Patent Title (中): 使用牺牲材料形成通孔
Application No.: US11824212

Application Date: 2007-06-29
Publication No.: US20090004841A1

Publication Date: 2009-01-01
Inventor: Lakshmi Supriya , Omar J. Bchir
Applicant: Lakshmi Supriya , Omar J. Bchir
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

In one embodiment, the present invention includes a method for forming a sacrificial material layer, patterning it to obtain a first patterned sacrificial material layer, embedding the first patterned sacrificial material layer into a dielectric material, treating the first patterned sacrificial material layer to remove it to thus provide a patterned dielectric layer having a plurality of openings in which vias may be formed. Other embodiments are described and claimed.

Abstract(Chinese):

在一个实施例中，本发明包括一种形成牺牲材料层的方法，将其图形化以获得第一图案化牺牲材料层，将第一图案化牺牲材料层嵌入电介质材料中，处理第一图案化牺牲材料层以去除它从而提供具有多个开口的图案化电介质层，其中可以形成通孔。描述和要求保护其他实施例。

Public/Granted literature

US07727886B2 Forming vias using sacrificial material Public/Granted day:2010-06-01

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的