发明申请
- 专利标题： ETCHING COMPOSITION AND METHOD FOR ETCHING A SUBSTRATE
- 专利标题（中）： 蚀刻组合物和蚀刻基材的方法
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申请号： US12208732申请日： 2008-09-11
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公开(公告)号： US20090008366A1公开(公告)日： 2009-01-08
- 发明人: Yasushi HARA , Fumiharu Takahashi , Hiroaki Hayashi
- 申请人： Yasushi HARA , Fumiharu Takahashi , Hiroaki Hayashi
- 申请人地址： JP Shunan-shi
- 专利权人： TOSOH COPORATION
- 当前专利权人： TOSOH COPORATION
- 当前专利权人地址： JP Shunan-shi
- 优先权： JP2004-087225 20040324
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.