发明申请
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US12213711申请日： 2008-06-24
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公开(公告)号： US20090008728A1公开(公告)日： 2009-01-08
- 发明人: Tetsuo Fujii , Kazuhiko Sugiura
- 申请人： Tetsuo Fujii , Kazuhiko Sugiura
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-174028 20070702; JP2008-4144 20080111
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/58
摘要：
A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
公开/授权文献
- US07968958B2 Semiconductor device and manufacturing method of the same 公开/授权日：2011-06-28
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