发明申请
US20090009229A1 HIGH/LOW VOLTAGE TOLERANT INTERFACE CIRCUIT AND CRYSTAL OSCILLATOR CIRCUIT
有权
高/低电压耐受接口电路和晶体振荡器电路
- 专利标题: HIGH/LOW VOLTAGE TOLERANT INTERFACE CIRCUIT AND CRYSTAL OSCILLATOR CIRCUIT
- 专利标题(中): 高/低电压耐受接口电路和晶体振荡器电路
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申请号: US11773966申请日: 2007-07-06
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公开(公告)号: US20090009229A1公开(公告)日: 2009-01-08
- 发明人: Ming-Dou Ker , Hung-Tai Liao , Ryan Hsin-Chin Jiang
- 申请人: Ming-Dou Ker , Hung-Tai Liao , Ryan Hsin-Chin Jiang
- 申请人地址: TW Taipei County
- 专利权人: AMAZING MICROELECTRONIC CORPORATION
- 当前专利权人: AMAZING MICROELECTRONIC CORPORATION
- 当前专利权人地址: TW Taipei County
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A high/low voltage tolerant interface circuit and a crystal oscillator circuit using the same are provided herein. The interface circuit includes a first transistor, a bulk-voltage generator module and an bias module. The first transistor includes a gate, a first source/drain, a bulk coupled to the first source/drain of the first transistor and a second source/drain coupled to an input node. The bulk-voltage generator module is, used to determine whether a first voltage or a predetermined voltage is being provided to the bulk of the first transistor according to the voltage of the input node. The bias module is coupled to the gate of the first transistor. The bias module is used to provide an bias voltage to the gate of the first transistor and makes the first transistor conduct in order to control the voltage of the second source/drain voltage of the first transistor.
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