发明申请
- 专利标题： Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
- 专利标题（中）： 氮化物半导体发光器件及其制造方法
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申请号： US12216295申请日： 2008-07-02
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公开(公告)号： US20090010293A1公开(公告)日： 2009-01-08
- 发明人: Takeshi Kamikawa
- 申请人： Takeshi Kamikawa
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 优先权： JP2007-174748 20070703
- 主分类号： H01S5/22
- IPC分类号： H01S5/22 ; H01L33/00
摘要：
A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.