发明申请
- 专利标题： PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS
- 专利标题（中）： 用于光刻机工艺的光刻胶贴片
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申请号： US12128129申请日： 2008-05-28
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公开(公告)号： US20090011377A1公开(公告)日： 2009-01-08
- 发明人: Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- 申请人： Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
公开/授权文献
- US07910290B2 Photoresist topcoat for a photolithographic process 公开/授权日：2011-03-22