发明申请
- 专利标题: Method for Depositing a Vapour Deposition Material
- 专利标题(中): 沉积气相沉积材料的方法
-
申请号: US12134469申请日: 2008-06-06
-
公开(公告)号: US20090011582A1公开(公告)日: 2009-01-08
- 发明人: Jan Birnstock , Ansgar Werner , Michael Hofmann
- 申请人: Jan Birnstock , Ansgar Werner , Michael Hofmann
- 申请人地址: DE Dresden
- 专利权人: NOVALED AG
- 当前专利权人: NOVALED AG
- 当前专利权人地址: DE Dresden
- 优先权: EP05026703.8 20051207; EPPCT/EP2006/011775 20061207
- 主分类号: H01L21/22
- IPC分类号: H01L21/22
摘要:
Method for depositing a vapour deposition material on a base material, in particular for doping a semiconductor material, in which a vapour deposition batch, in which the vapour deposition material is enclosed in an air-tight manner by a shell, is introduced into a vapour deposition chamber and the shell is opened in the vapour deposition chamber, so that the vapour deposition material in the vapour deposition chamber then evaporates and is deposited on the base material, wherein the shell is opened by at least partially melting by heating a meltable shell material which at least partially forms the shell at a melting temperature which is lower than an evaporation temperature of the vapour deposition material.
公开/授权文献
- US08227029B2 Method for depositing a vapour deposition material 公开/授权日:2012-07-24
信息查询
IPC分类: