发明申请
US20090011582A1 Method for Depositing a Vapour Deposition Material 有权
沉积气相沉积材料的方法

Method for Depositing a Vapour Deposition Material
摘要:
Method for depositing a vapour deposition material on a base material, in particular for doping a semiconductor material, in which a vapour deposition batch, in which the vapour deposition material is enclosed in an air-tight manner by a shell, is introduced into a vapour deposition chamber and the shell is opened in the vapour deposition chamber, so that the vapour deposition material in the vapour deposition chamber then evaporates and is deposited on the base material, wherein the shell is opened by at least partially melting by heating a meltable shell material which at least partially forms the shell at a melting temperature which is lower than an evaporation temperature of the vapour deposition material.
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