发明申请
- 专利标题： SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题（中）： 用于选择性地氧化硅氧化物的硅酸盐组合物，用于抛光氮化硅层的方法和使用其制造半导体器件的方法
-
申请号： US12167781申请日： 2008-07-03
-
公开(公告)号： US20090011599A1公开(公告)日： 2009-01-08
- 发明人: Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
- 申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
- 优先权： KR2007-67842 20070706
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; C09K3/14
摘要：
Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.