Invention Application
- Patent Title: PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US12127712Application Date: 2008-05-27
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Publication No.: US20090014705A1Publication Date: 2009-01-15
- Inventor: Hong-Hui Hsu , Frederick T. Chen , Ming-Jer Kao
- Applicant: Hong-Hui Hsu , Frederick T. Chen , Ming-Jer Kao
- Applicant Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Priority: TWTW96124890 20070709
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/77
Abstract:
A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer.
Information query
IPC分类:
