Invention Application
- Patent Title: METHOD OF TREATING INTERFACE DEFECTS IN A SUBSTRATE
- Patent Title (中): 处理基板界面缺陷的方法
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Application No.: US12165365Application Date: 2008-06-30
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Publication No.: US20090014720A1Publication Date: 2009-01-15
- Inventor: Carlos MAZURE , Ian Cayrefourcq , Konstantin Bourdelle
- Applicant: Carlos MAZURE , Ian Cayrefourcq , Konstantin Bourdelle
- Priority: FR0756370 20070710
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L29/04
Abstract:
The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
Public/Granted literature
- US07799651B2 Method of treating interface defects in a substrate Public/Granted day:2010-09-21
Information query
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