发明申请
US20090014735A1 Semiconductor device and semiconductor device fabrication method
审中-公开
半导体器件和半导体器件制造方法
- 专利标题： Semiconductor device and semiconductor device fabrication method
- 专利标题（中）： 半导体器件和半导体器件制造方法
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申请号： US11785501申请日： 2007-04-18
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公开(公告)号： US20090014735A1公开(公告)日： 2009-01-15
- 发明人: Mitsutoshi Higashi , Kei Murayama , Akinori Shiraishi , Yuichi Taguchi
- 申请人： Mitsutoshi Higashi , Kei Murayama , Akinori Shiraishi , Yuichi Taguchi
- 专利权人： SHINKO ELECTRIC INDUSTRIES CO., LTD.
- 当前专利权人： SHINKO ELECTRIC INDUSTRIES CO., LTD.
- 优先权： JPP.2006-115725 20060419
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire.
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