Invention Application
US20090014735A1 Semiconductor device and semiconductor device fabrication method
审中-公开
半导体器件和半导体器件制造方法
- Patent Title: Semiconductor device and semiconductor device fabrication method
- Patent Title (中): 半导体器件和半导体器件制造方法
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Application No.: US11785501Application Date: 2007-04-18
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Publication No.: US20090014735A1Publication Date: 2009-01-15
- Inventor: Mitsutoshi Higashi , Kei Murayama , Akinori Shiraishi , Yuichi Taguchi
- Applicant: Mitsutoshi Higashi , Kei Murayama , Akinori Shiraishi , Yuichi Taguchi
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Priority: JPP.2006-115725 20060419
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire.
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