发明申请
- 专利标题: Metal Gates of PMOS Devices Having High Work Functions
- 专利标题(中): 具有高功函数的PMOS器件的金属栅极
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申请号: US11840365申请日: 2007-08-17
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公开(公告)号: US20090014813A1公开(公告)日: 2009-01-15
- 发明人: Donald Y. Chao , Albert Chin , Ping-Fang Hung , Foug-Yu Yen , Kang-Cheng Lin , Kuo-Tai Huang
- 申请人: Donald Y. Chao , Albert Chin , Ping-Fang Hung , Foug-Yu Yen , Kang-Cheng Lin , Kuo-Tai Huang
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The refractory metal silicide layer, the silicon-rich refractory metal silicide layer and the metal-rich refractory metal silicide layer include same refractory metals. The semiconductor structure forms a portion of a gate electrode of a metal-oxide-semiconductor device.
公开/授权文献
- US08159035B2 Metal gates of PMOS devices having high work functions 公开/授权日:2012-04-17