A method of manufacturing a semiconductor device including at least one of the following steps: Forming an insulating film having at least one trench on and/or over a semiconductor substrate. Forming a metal film on and/or over a surface of an insulating film, including inside the trench. Forming a metal seed layer on and/or over the metal film inside the trench. Forming a metal plating layer on and/or over the metal seed layer to fill the trench.