发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH DUMMY REGION
- 专利标题（中）： 集成电路系统与DUMMY区域
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申请号： US12235784申请日： 2008-09-23
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公开(公告)号： US20090014883A1公开(公告)日： 2009-01-15
- 发明人: Dong Sheng Liu , Cing Gie Lim , Subbiah Chettiar Mahadevan , Feng Chen
- 申请人： Dong Sheng Liu , Cing Gie Lim , Subbiah Chettiar Mahadevan , Feng Chen
- 申请人地址： SG Singapore
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second region is formed adjacent at least a portion of the perimeter of the first region and the third region is formed between the first region and the second region. An opening is formed in the third region and a material is deposited within the opening for preventing erosion of the first region.
公开/授权文献
- US07741719B2 Integrated circuit system with dummy region 公开/授权日：2010-06-22
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