发明申请
US20090017577A1 Methods of Forming Phase Change Memory Devices Having Bottom Electrodes
有权
形成具有底部电极的相变存储器件的方法
- 专利标题: Methods of Forming Phase Change Memory Devices Having Bottom Electrodes
- 专利标题(中): 形成具有底部电极的相变存储器件的方法
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申请号: US12170038申请日: 2008-07-09
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公开(公告)号: US20090017577A1公开(公告)日: 2009-01-15
- 发明人: Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
- 申请人: Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2007-0070153 20070712; KR10-2007-0073521 20070723
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.