Invention Application
US20090017619A1 METHOD FOR MANUFACTURING METAL SILICIDE LAYER IN A SEMICONDUCTOR DEVICE 审中-公开
在半导体器件中制造金属硅化物层的方法

METHOD FOR MANUFACTURING METAL SILICIDE LAYER IN A SEMICONDUCTOR DEVICE
Abstract:
A metal suicide layer is fabricated in a semiconductor device. A first metal layer is deposited on a silicon substrate formed with an S interlayer dielectric having a contact hole through PVD. A second metal layer is deposited on the first metal layer through any one of CVD and ALD. Annealing is performed on the silicon substrate which is formed with the first and second metal layers to form the metal silicide. The portions of the second metal layer and the first metal layer which have not reacted during annealing are removed.
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