Invention Application
US20090017619A1 METHOD FOR MANUFACTURING METAL SILICIDE LAYER IN A SEMICONDUCTOR DEVICE
审中-公开
在半导体器件中制造金属硅化物层的方法
- Patent Title: METHOD FOR MANUFACTURING METAL SILICIDE LAYER IN A SEMICONDUCTOR DEVICE
- Patent Title (中): 在半导体器件中制造金属硅化物层的方法
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Application No.: US12169790Application Date: 2008-07-09
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Publication No.: US20090017619A1Publication Date: 2009-01-15
- Inventor: Young Jin LEE , Baek Mann KIM , Soo Hyun KIM , Dong Ha JUNG , Jeong Tae KIM , Hyeong Tag JEON , Keun Woo LEE , Keun Jun KIM , Tae Yong PARK
- Applicant: Young Jin LEE , Baek Mann KIM , Soo Hyun KIM , Dong Ha JUNG , Jeong Tae KIM , Hyeong Tag JEON , Keun Woo LEE , Keun Jun KIM , Tae Yong PARK
- Priority: KR10-2007-0069034 20070710
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A metal suicide layer is fabricated in a semiconductor device. A first metal layer is deposited on a silicon substrate formed with an S interlayer dielectric having a contact hole through PVD. A second metal layer is deposited on the first metal layer through any one of CVD and ALD. Annealing is performed on the silicon substrate which is formed with the first and second metal layers to form the metal silicide. The portions of the second metal layer and the first metal layer which have not reacted during annealing are removed.
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