- 专利标题: Methods of sputtering a protective coating on a semiconductor substrate
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申请号: US10952088申请日: 2004-09-29
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公开(公告)号: US20090020417A1公开(公告)日: 2009-01-22
- 发明人: Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
- 申请人: Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.