发明申请
- 专利标题: DUAL WORKFUNCTION SEMICONDUCTOR DEVICE
- 专利标题(中): 双功能半导体器件
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申请号: US12145413申请日: 2008-06-24
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公开(公告)号: US20090020821A1公开(公告)日: 2009-01-22
- 发明人: Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
- 申请人: Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
- 申请人地址: BE Leuven
- 专利权人: Interuniversitair Microelektronica Centrum vzw (IMEC)
- 当前专利权人: Interuniversitair Microelektronica Centrum vzw (IMEC)
- 当前专利权人地址: BE Leuven
- 优先权: EP07012357.5 20070625
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L27/092
摘要:
A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
公开/授权文献
- US07851297B2 Dual workfunction semiconductor device 公开/授权日:2010-12-14