发明申请
US20090021975A1 METHOD AND MEDIA FOR IMPROVING FERROELECTRIC DOMAIN STABILITY IN AN INFORMATION STORAGE DEVICE
失效
用于改善信息存储设备中的电磁域稳定性的方法和媒体
- 专利标题: METHOD AND MEDIA FOR IMPROVING FERROELECTRIC DOMAIN STABILITY IN AN INFORMATION STORAGE DEVICE
- 专利标题(中): 用于改善信息存储设备中的电磁域稳定性的方法和媒体
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申请号: US11778571申请日: 2007-07-16
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公开(公告)号: US20090021975A1公开(公告)日: 2009-01-22
- 发明人: Valluri Ramana Rao , Li-Peng Wang , Qing Ma , Byong Man Kim
- 申请人: Valluri Ramana Rao , Li-Peng Wang , Qing Ma , Byong Man Kim
- 主分类号: G11C11/12
- IPC分类号: G11C11/12 ; B32B15/04 ; H01L21/62
摘要:
A media for an information storage device comprises a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.