发明申请
- 专利标题： INTERNAL VOLTAGE GENERATOR AND CONTROL METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICE AND SYSTEM INCLUDING THE SAME
- 专利标题（中）： 内部电压发生器及其控制方法及其半导体存储器件及其系统
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申请号： US12175494申请日： 2008-07-18
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公开(公告)号： US20090021985A1公开(公告)日： 2009-01-22
- 发明人: Dae-Seok Byeon
- 申请人： Dae-Seok Byeon
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2007-72314 20070719
- 主分类号： G11C16/06
- IPC分类号： G11C16/06 ; G11C7/00 ; G11C5/14
摘要：
An internal voltage of a semiconductor memory device is controlled, where the internal voltage is set according to a reference voltage. The reference voltage is controlled according to first control data to increase the internal voltage to be higher than a target voltage in a power-up operation, and second control data is read. The reference voltage is then controlled according to the second control data to decrease the internal voltage to the target voltage.