发明申请
- 专利标题: NANOPHOTONIC DEVICES IN SILICON
- 专利标题(中): 硅中的纳米器件
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申请号: US12117480申请日: 2008-05-08
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公开(公告)号: US20090022445A1公开(公告)日: 2009-01-22
- 发明人: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- 申请人: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- 申请人地址: US CA Pasadena
- 专利权人: California Institute of Technology
- 当前专利权人: California Institute of Technology
- 当前专利权人地址: US CA Pasadena
- 主分类号: G02F1/035
- IPC分类号: G02F1/035 ; G02F1/23 ; G02F1/01
摘要:
Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants χ2 and χ3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed. Designs having responsivity of less than 1 volt-centimeter are described.
公开/授权文献
- US07643714B2 Nanophotonic devices in silicon 公开/授权日:2010-01-05
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