发明申请
- 专利标题： Semiconductor Device Manufacturing Method and Method for Reducing Microroughness of Semiconductor Surface
- 专利标题（中）： 半导体器件的制造方法和减少半导体表面微观粗糙度的方法
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申请号： US12223385申请日： 2007-01-30
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公开(公告)号： US20090023231A1公开(公告)日： 2009-01-22
- 发明人: Tadahiro Ohmi , Hitoshi Morinaga
- 申请人： Tadahiro Ohmi , Hitoshi Morinaga
- 专利权人： TOHOKU UNIVERSITY,Foundation for Advancement of International Science
- 当前专利权人： TOHOKU UNIVERSITY,Foundation for Advancement of International Science
- 优先权： JP2006-024755 20060201
- 国际申请： PCT/JP2007/051487 WO 20070130
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/306 ; B08B7/00
摘要：
Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.
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