It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.