发明申请
US20090034148A1 Method of making an electrostatic chuck with reduced plasma penetration and arcing
有权
制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
- 专利标题: Method of making an electrostatic chuck with reduced plasma penetration and arcing
- 专利标题(中): 制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
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申请号: US11888327申请日: 2007-07-31
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公开(公告)号: US20090034148A1公开(公告)日: 2009-02-05
- 发明人: Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
- 申请人: Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Kadthala Ramaya Narendrnath , Muhammad Rasheed , Tony Kaushal
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H02N13/00
- IPC分类号: H02N13/00
摘要:
A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
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