发明申请
- 专利标题： Self-Aligned Cross-Point Memory Fabrication
- 专利标题（中）： 自对准交叉点内存制作
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申请号： US12182905申请日： 2008-07-30
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公开(公告)号： US20090035934A1公开(公告)日： 2009-02-05
- 发明人: Sidlgata V. Sreenivasan , Christopher Mark Melliar-Smith , Dwayne L. LaBrake
- 申请人： Sidlgata V. Sreenivasan , Christopher Mark Melliar-Smith , Dwayne L. LaBrake
- 申请人地址： US TX Austin
- 专利权人： Molecular Imprints, Inc.
- 当前专利权人： Molecular Imprints, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
公开/授权文献
- US07795132B2 Self-aligned cross-point memory fabrication 公开/授权日：2010-09-14
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