发明申请
US20090036629A1 POLYSILAZANE PERHYDRIDE SOLUTION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
审中-公开
聚硅氧烷高分子溶液及使用其制造半导体器件的方法
- 专利标题: POLYSILAZANE PERHYDRIDE SOLUTION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题(中): 聚硅氧烷高分子溶液及使用其制造半导体器件的方法
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申请号: US12146336申请日: 2008-06-25
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公开(公告)号: US20090036629A1公开(公告)日: 2009-02-05
- 发明人: Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Jakeshi Hoshi , Katsuhiko Tachibana
- 申请人: Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Jakeshi Hoshi , Katsuhiko Tachibana
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 优先权: JP2005-065811 20050309
- 主分类号: C08G77/12
- IPC分类号: C08G77/12
摘要:
Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.