发明申请
- 专利标题： PROCESS FOR PRODUCING SINGLE CRYSTAL
- 专利标题（中）： 生产单晶的方法
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申请号： US12234799申请日： 2008-09-22
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公开(公告)号： US20090038539A1公开(公告)日： 2009-02-12
- 发明人: Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人： Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人地址： JP Nagoya-City JP Suita-City
- 专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人地址： JP Nagoya-City JP Suita-City
- 优先权： JP2006-080613 20060323
- 主分类号： C30B9/00
- IPC分类号： C30B9/00
摘要：
A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.
公开/授权文献
- US08486190B2 Process for producing single crystal 公开/授权日：2013-07-16
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