发明申请
- 专利标题： SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 固态成像元件及其制造方法
-
申请号： US12180920申请日： 2008-07-28
-
公开(公告)号： US20090039387A1公开(公告)日： 2009-02-12
- 发明人: Toru Okino , Mitsuyoshi Mori
- 申请人： Toru Okino , Mitsuyoshi Mori
- 优先权： JP2007-208903 20070810
- 主分类号： H01L31/0336
- IPC分类号： H01L31/0336 ; H01L31/18
摘要：
A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.