BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE

Invention Application

US20090039416A1 BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 有权

Title translation: 阻塞电路工程电荷捕捉存储单元高速擦除

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Patent Title: BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE
Patent Title (中): 阻塞电路工程电荷捕捉存储单元高速擦除
Application No.: US11845321

Application Date: 2007-08-27
Publication No.: US20090039416A1

Publication Date: 2009-02-12
Inventor: Sheng Chih Lai , Hang-Ting Lue , Chien Wei Liao
Applicant: Sheng Chih Lai , Hang-Ting Lue , Chien Wei Liao
Applicant Address: TW Hsinchu
Assignee: Macronix International Co., Ltd.
Current Assignee: Macronix International Co., Ltd.
Current Assignee Address: TW Hsinchu
Main IPC: H01L29/792
IPC: H01L29/792 ; H01L21/336

BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE

Abstract:

A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.

Abstract(Chinese):

带隙设计的电荷捕获存储单元包括电荷捕获元件，其通过具有介电常数的金属掺杂氧化硅材料的阻挡层（例如掺铝氧化硅）与栅极分离，并与半导体本体分离，包括通道由工程隧道电介质。

Public/Granted literature

US07737488B2 Blocking dielectric engineered charge trapping memory cell with high speed erase Public/Granted day:2010-06-15

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/792	......带有电荷捕获栅绝缘体，例如MNOS存储晶体管