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发明申请
US20090039477A1 SILICON NITRIDE SUBSTRATE, A MANUFACTURING METHOD OF THE SILICON NITRIDE SUBSTRATE, A SILICON NITRIDE WIRING BOARD USING THE SILICON NITRIDE SUBSTRATE, AND SEMICONDUCTOR MODULE 有权
硅氮化物衬底，氮化硅衬底的制造方法，使用氮化硅衬底的氮化硅接线板和半导体模块

SILICON NITRIDE SUBSTRATE, A MANUFACTURING METHOD OF THE SILICON NITRIDE SUBSTRATE, A SILICON NITRIDE WIRING BOARD USING THE SILICON NITRIDE SUBSTRATE, AND SEMICONDUCTOR MODULE
摘要：
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
摘要（中）：

在涉及本发明的实施方案的氮化硅衬底中，β型氮化硅的面内取向度fa为0.4-0.8。 这里，面内取向fa的度可以通过β型氮化硅中的每个晶格面取向中的衍射X射线强度的速度来确定。 本发明人的研究结果表明，当面内取向度fa为0.4-0.8时，获得了高断裂韧性和高热导率。 沿厚度方向，可以获得6.0MPa.m1 / 2以上的断裂韧性和90W / m·K以上的导热率。

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