发明申请
- 专利标题: Apparatus to Monitor Process-Based Parameters of an Integrated Circuit (IC) Substrate
- 专利标题(中): 监控集成电路(IC)基板工艺参数的装置
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申请号: US12254364申请日: 2008-10-20
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公开(公告)号: US20090040059A1公开(公告)日: 2009-02-12
- 发明人: Leonard DAUPHINEE , Lawrence M. Burns
- 申请人: Leonard DAUPHINEE , Lawrence M. Burns
- 申请人地址: US CA Irvine
- 专利权人: Broadcom Corporation
- 当前专利权人: Broadcom Corporation
- 当前专利权人地址: US CA Irvine
- 主分类号: G08B1/08
- IPC分类号: G08B1/08
摘要:
A process monitor measures the absolute value of unit sample resistors and transistors on a common Integrated Circuit (IC) substrate. This information can be used to adjust the gain of an amplifier assembly to a desired value, or to determine the true, corrected gain of such the amplifier assembly. Also, process information about process variations corresponding to the common IC substrate can be collected from the process monitor. Gain correction factors are derived and applied to the amplifier assembly to compensate for the process variations using the gain value and the process information.
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