Invention Application
- Patent Title: Method of forming fine patterns using a block copolymer
- Patent Title (中): 使用嵌段共聚物形成精细图案的方法
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Application No.: US12076491Application Date: 2008-03-19
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Publication No.: US20090042146A1Publication Date: 2009-02-12
- Inventor: Kyoung Taek Kim , Hyun Woo Kim , Sang Ouk Kim , Shi Yong Yi , Seong Woon Choi
- Applicant: Kyoung Taek Kim , Hyun Woo Kim , Sang Ouk Kim , Shi Yong Yi , Seong Woon Choi
- Priority: KR10-2007-0080325 20070809
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.
Public/Granted literature
- US08039196B2 Method of forming fine patterns using a block copolymer Public/Granted day:2011-10-18
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