发明申请
- 专利标题: STRAINED SEMICONDUCTOR BY FULL WAFER BONDING
- 专利标题(中): 应变半导体通过全波束焊接
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申请号: US12243617申请日: 2008-10-01
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公开(公告)号: US20090042360A1公开(公告)日: 2009-02-12
- 发明人: Leonard Forbes , Joseph E. Geusic , Salman Akram
- 申请人: Leonard Forbes , Joseph E. Geusic , Salman Akram
- 专利权人: Micron Technology Inc.
- 当前专利权人: Micron Technology Inc.
- 主分类号: H01L21/425
- IPC分类号: H01L21/425
摘要:
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
公开/授权文献
- US07989311B2 Strained semiconductor by full wafer bonding 公开/授权日:2011-08-02
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