发明申请
US20090042390A1 ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME
审中-公开
用于硅晶片表面形状控制的蚀刻和使用其制造硅波的方法
- 专利标题: ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME
- 专利标题(中): 用于硅晶片表面形状控制的蚀刻和使用其制造硅波的方法
-
申请号: US11836493申请日: 2007-08-09
-
公开(公告)号: US20090042390A1公开(公告)日: 2009-02-12
- 发明人: Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
- 申请人: Sakae Koyata , Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; C09K13/08
摘要:
It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.