发明申请
US20090042407A1 Dual Top Gas Feed Through Distributor for High Density Plasma Chamber
审中-公开
双重顶部气体馈送通过高密度等离子体室的分配器
- 专利标题： Dual Top Gas Feed Through Distributor for High Density Plasma Chamber
- 专利标题（中）： 双重顶部气体馈送通过高密度等离子体室的分配器
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申请号： US12253700申请日： 2008-10-17
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公开(公告)号： US20090042407A1公开(公告)日： 2009-02-12
- 发明人: Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
- 申请人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.
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