发明申请
- 专利标题: PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS
- 专利标题(中): 多级模拟记忆细胞的编程方案
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申请号: US12186867申请日: 2008-08-06
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公开(公告)号: US20090043951A1公开(公告)日: 2009-02-12
- 发明人: Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasorla
- 申请人: Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasorla
- 申请人地址: IL Herzilia Pituach
- 专利权人: Anobit Technologies Ltd.
- 当前专利权人: Anobit Technologies Ltd.
- 当前专利权人地址: IL Herzilia Pituach
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
公开/授权文献
- US08259497B2 Programming schemes for multi-level analog memory cells 公开/授权日:2012-09-04
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